MSRT100100AD

MSRT100100AD

$37.15
  • Description:DIODE MOD GP 1000V 100A 3TOWER
  • Series:-

SKU:f9ef39b3aca0 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1000V 100A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1000 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 100 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 1000 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRT100100AD

Overview

The MSRT100100AD is a silicon standard recovery diode module from the MSRT100 series, manufactured by GeneSiC Semiconductor. It features an average forward current rating of 100 A per leg and offers repetitive peak reverse voltage options ranging from 600 V to 1000 V. The device utilizes a three-tower package with an electrically isolated base plate. Key electrical characteristics include a maximum instantaneous forward voltage of 1.1 V at 100 A and a peak forward surge current capability of 2000 A. The junction temperature range spans from -55 °C to +150 °C.

Feature Summary

  • High surge current capability for robust transient handling
  • Three-tower package design providing compact integration
  • Electrically isolated base plate for enhanced safety and thermal management

Applications

  • Industrial power conversion systems
  • Inverter circuits requiring high isolation
  • DC-DC converter modules

Procurement Notes

Verify the specific voltage variant required (600 V, 800 V, or 1000 V) as the part number suffix may indicate different blocking voltages within the MSRT100XXAD family. Confirm that the application environment supports the specified operating temperature range and thermal resistance limits. Ensure proper mounting torque is applied to the isolated base plate for optimal heat dissipation. Check datasheet specifications for forward voltage drop variations at different junction temperatures before finalizing the design.

Selection Notes

Select this component when high surge capability and electrical isolation are critical requirements. The three-tower package allows for efficient use of board space while maintaining high current ratings. Consider the thermal resistance of 5 °C/W per leg when designing the heatsink interface. The standard recovery characteristic makes it suitable for general-purpose rectification rather than high-frequency switching applications where fast recovery diodes are preferred.

Part Context

This module belongs to the MSRT100 series of silicon standard recovery diodes, which includes variants with different reverse voltage ratings such as MSRT10060D, MSRT10080D, and MSRT100100D. All members share the same physical package and thermal characteristics but differ in their blocking voltage capabilities. The series is designed for medium-power industrial applications requiring reliable rectification with high surge tolerance.

Replacement Considerations

Direct replacements must match the 100 A current rating, 1000 V reverse voltage, and three-tower isolated package form factor. Verify that substitute components offer comparable peak surge current and thermal resistance values to ensure system reliability without redesigning the cooling infrastructure.

MSRT100100ADMSRT100100AD
$37.15
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