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Product Detailed Parameters
- Description：DIODE MOD GP 1600V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1600 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 100 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MSRT100160D is a silicon standard recovery diode module rated for a repetitive peak reverse voltage of 1600 V. It provides an average forward current of 100 A per leg with a maximum instantaneous forward voltage of 1.1 V at 25 °C. The device features a three-tower package with an electrically isolated base plate and supports junction temperatures from -55 to 150 °C. Thermal resistance from junction to case is 0.45 °C/W, and it withstands a peak forward surge current of 2000 A.
Feature Summary
- High surge capability design
- Three tower package structure
- Electrically isolated base plate
Applications
- Industrial power conversion systems
- Inverter circuits requiring high voltage isolation
- Standard recovery rectification applications
Procurement Notes
Verify the specific voltage rating suffix matches the required system blocking voltage. Confirm thermal interface material compatibility with the isolated base plate. Ensure mounting hardware aligns with the three-tower package dimensions. Check datasheet revisions for updated electrical characteristics before final integration.
Selection Notes
Select this component when a 1600 V blocking capability is required alongside 100 A continuous current handling. The isolated base plate simplifies heatsinking in multi-phase configurations. Consider the standard recovery speed for general-purpose rectification rather than high-frequency switching applications.
Part Context
This model belongs to the MSRT100XXXD series, which includes variants ranging from 1200 V to 1600 V. All models share identical physical packaging and thermal characteristics, differing only in their maximum repetitive peak reverse voltage ratings. The series utilizes a standardized three-tower configuration for consistent mechanical integration.
Replacement Considerations
Direct substitutes within the same series include MSRT100120D and MSRT100140D, provided lower voltage ratings are acceptable. Verify that any replacement maintains the 100 A current rating and compatible thermal resistance specifications.
FAQ
Is the MSRT100160D sensitive to electrostatic discharge?
No, the device is explicitly documented as not being ESD sensitive.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
Does the package provide electrical isolation?
Yes, the module features an electrically isolated base plate.
