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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 100 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRT10060AD is a silicon standard recovery diode module from the MSRT100 series, manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage (VRRM) of 600 V and an average forward current (IF(AV)) of 100 A per leg. Key electrical characteristics include a maximum instantaneous forward voltage of 1.1 V at Tj = 25 °C and a maximum thermal resistance (junction-to-case) of 0.45 °C/W per leg. The module operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Three-tower package design providing high surge capability
- Electrically isolated base plate for enhanced safety
- Standard silicon recovery technology
Applications
- Industrial power conversion systems
- High-current rectification circuits
- Isolated power supply modules
Procurement Notes
Verify the specific voltage rating suffix against the datasheet, as the MSRT100 series spans 600 V to 1000 V. Confirm the manufacturer source, as GeneSiC assets are managed by Navitas Semiconductor. Ensure the component matches the required isolation type and mounting configuration for your application.
Selection Notes
Select this module for applications requiring high average current handling and electrical isolation. The low thermal resistance facilitates efficient heat dissipation in compact designs. Consider the 600 V rating specifically for this part number variant within the broader MSRT100 family.
Part Context
This component belongs to the MSRT100 series of silicon standard recovery diode modules. The series includes variants with different voltage ratings, such as MSRT10080 and MSRT100100. These modules share the same three-tower physical footprint and isolation architecture, differing primarily in their peak reverse voltage specifications.
Replacement Considerations
Direct substitutes within the same series include MSRT10080AD and MSRT100100AD, provided the higher voltage ratings do not conflict with system constraints. Verify that the replacement maintains the 100 A current capacity and isolated base plate requirements.
