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Product Detailed Parameters
- Description：DIODE MODULE GP 800V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：800 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 100 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 800 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRT10080D is a silicon standard recovery diode module from the MSRT100 series, manufactured by GeneSiC Semiconductor. It features a Three Tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 800 V and an average forward current of 100 A per leg. Maximum instantaneous forward voltage is 1.1 V at 100 A and 25 °C. The junction-to-case thermal resistance is 0.45 °C/W. Operating temperature ranges from -55 °C to +150 °C.
Feature Summary
- Electrically isolated base plate for enhanced safety in high-voltage applications
- High surge capability supporting 2000 A peak forward surge current per leg
- Not ESD sensitive for simplified handling during assembly
Applications
- Industrial power conversion systems
- Automotive power electronics
- General purpose rectification in high-current circuits
Procurement Notes
Verify the specific suffix (D vs AD) against the datasheet to confirm exact electrical tolerances and marking requirements. Confirm package dimensions match the Three Tower Iso specification. Ensure thermal interface materials are compatible with the isolated base plate design for optimal heat dissipation.
Selection Notes
Select this component when an electrically isolated standard recovery diode is required for currents up to 100 A. The 800 V rating suits medium-voltage applications. Compare thermal resistance values against system cooling capabilities. Verify that the standard recovery characteristics align with the switching frequency requirements of the target circuit.
Part Context
This module belongs to the MSRT100 series, which includes variants ranging from 600 V to 1000 V reverse voltage. All members share the same Three Tower isolated package form factor and 100 A current rating. The series is designed for robust performance in demanding industrial and automotive environments requiring galvanic isolation.
Replacement Considerations
Direct substitutes within the same series include MSRT10060D, MSRT100100D, MSRT10060AD, and MSRT100100AD. These parts share identical packaging and current ratings but differ in reverse voltage blocking capability. Ensure the replacement voltage rating meets or exceeds the original circuit requirements.
