MSRT150120D

MSRT150120D

$70.00
  • Description:DIODE MOD GP 1200V 150A 3TOWER
  • Series:-

SKU:050d69af77c5 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1200V 150A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 150 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRT150120D

Overview

The MSRT150120D is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features an average forward current rating of 150 A per leg and offers repetitive peak reverse voltage options ranging from 1200 V to 1600 V. The device utilizes a three tower package with an electrically isolated base plate, ensuring safety in high-voltage applications. Maximum thermal resistance from junction to case is 0.40 °C/W per leg, supporting efficient heat dissipation. The module operates within a temperature range of -55 °C to +150 °C and provides a peak forward surge current capability of 2250 A.

Feature Summary

  • High surge current capability for robust transient handling
  • Electrically isolated base plate for enhanced safety
  • Three tower package design for compact integration

Applications

  • Industrial power conversion systems
  • Inverter circuits requiring high isolation
  • General purpose rectification modules

Procurement Notes

Verify the specific voltage suffix (e.g., 120, 140, or 160) against system requirements, as the series spans multiple ratings. Confirm whether the 'A' variant is required for specific performance characteristics. Ensure mounting hardware compatibility with the three tower package style. Check for RoHS compliance documentation if environmental regulations apply to the deployment environment.

Selection Notes

Select this component for applications demanding high isolation and moderate current levels up to 150 A per leg. The standard recovery characteristic suits general-purpose rectification rather than high-frequency switching. Evaluate thermal management solutions based on the 0.40 °C/W junction-to-case resistance. Consider the operating temperature range limits when designing for extreme environmental conditions.

Part Context

This part belongs to the MSRT150XXXD family of silicon standard recovery diodes. The series includes variants with different reverse voltage ratings, specifically the MSRT150120D, MSRT150140D, and MSRT150160D. All variants share identical current ratings and package dimensions, differing primarily in their blocking voltage capabilities.

Replacement Considerations

Direct substitutes include other models within the same GeneSiC MSRT150XXXD series with matching current ratings. Verify that alternative modules maintain the three tower package form factor and isolated base plate configuration to ensure mechanical and electrical compatibility.

MSRT150120DMSRT150120D
$70.00
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