MSRT150160AD

Overview

The MSRT150160AD is a silicon standard recovery diode module from GeneSiC Semiconductor, rated for a repetitive peak reverse voltage of 1600 V and an average forward current of 150 A per leg. It utilizes a three tower package with an electrically isolated base plate. The device supports junction temperatures from -55 °C to 150 °C and offers a maximum thermal resistance of 0.40 °C/W per leg. Peak forward surge current reaches 2250 A.

Feature Summary

• Features an isolation type three tower package design
• Includes an electrically isolated base plate
• Provides high surge capability
• Not sensitive to electrostatic discharge

Applications

• Industrial power conversion systems
• High voltage rectification circuits
• Isolated DC-DC converter topologies

Procurement Notes

Verify the specific datasheet version against the manufacturer's official documentation before integration. Confirm that the 1600 V rating aligns with system voltage requirements. Ensure mounting hardware matches the three tower package dimensions. Check for RoHS compliance status in the latest product notices.

Selection Notes

Select this component when a 1600 V blocking voltage is required alongside 150 A continuous current handling. The isolated base plate simplifies heatsinking in multi-phase designs. Consider the 0.40 °C/W thermal resistance for heat dissipation calculations. Verify compatibility with existing PCB or busbar layouts due to the specific terminal configuration.

Part Context

This part belongs to the MSRT150XXXD series, which covers voltage ratings from 1200 V to 1600 V. It shares the same physical footprint and electrical characteristics as other variants in the family, differing only in the maximum repetitive peak reverse voltage specification.

Replacement Considerations

Direct substitutes include MSRT150120AD and MSRT150140AD within the same series. These alternatives offer lower voltage ratings but maintain identical current and thermal specifications.