MSRT15060D

MSRT15060D

$70.00
  • Description:DIODE MODULE GP 600V 150A 3TOWER
  • Series:-

SKU:d46d8ff8915b Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 600V 150A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 150 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRT15060D

Overview

The GeneSiC Semiconductor MSRT15060D is a silicon standard recovery diode module rated for a repetitive peak reverse voltage of 600 V. It provides an average forward current of 150 A per leg with a maximum instantaneous forward voltage of 1.1 V at Tj = 25 °C and IFM = 150 A. The device features an electrically isolated base plate and supports a peak forward surge current of 2250 A per leg. Operating junction temperature ranges from -55 to 150 °C, with a maximum thermal resistance (junction-to-case) of 0.40 °C/W.

Feature Summary

  • High surge capability utilizing a three tower package design
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Not sensitive to electrostatic discharge

Applications

  • Industrial power conversion systems
  • General purpose rectification in high current circuits
  • Inverter and converter topologies requiring isolated modules

Procurement Notes

Verify the specific voltage rating suffix matches the application requirement, as the MSRT150XX series includes variants up to 1000 V. Confirm the package type (D vs AD/ADR) aligns with mechanical constraints. Ensure thermal interface materials are compatible with the specified maximum junction temperature of 150 °C and that mounting torque specifications are strictly followed to maintain the 0.40 °C/W thermal performance.

Selection Notes

Select this component when a 600 V blocking capability is required alongside 150 A continuous current handling. The isolated base plate simplifies heatsinking strategies by eliminating the need for insulating washers. Consider the 1.1 V forward voltage drop for efficiency calculations at full load. The robust 2250 A surge rating provides tolerance against transient overcurrent events common in inductive loads.

Part Context

This part belongs to the MSRT150XX family of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series encompasses voltage ratings from 600 V to 1000 V, sharing identical current ratings and physical packaging dimensions. The MSRT15060D specifically denotes the 600 V variant within this standardized modular lineup designed for high-power industrial applications.

Replacement Considerations

Direct substitutes include other MSRT15060D units from the same manufacturer or equivalent 600 V, 150 A isolated diode modules from other vendors, provided they match the three-tower package footprint and terminal configuration.

MSRT15060DMSRT15060D
$70.00
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