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Product Detailed Parameters
- Description：DIODE MOD GP 1000V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1000 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1000 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRT200100AD is a silicon standard recovery diode module from the MSRT200 series, rated for a repetitive peak reverse voltage of 1000 V and an average forward current of 200 A per leg. It utilizes a Three Tower package with an electrically isolated base plate. The device supports junction temperatures from -55 °C to +150 °C and offers a peak forward surge current of 3000 A. Maximum thermal resistance from junction to case is 0.35 °C/W, with a maximum instantaneous forward voltage of 1.1 V at 200 A.
Feature Summary
- Features an electrically isolated base plate within a Three Tower package design
- Provides high surge capability with a 3000 A peak forward surge rating
- Constructed as a non-ESD sensitive silicon standard recovery diode
Applications
- Industrial power conversion systems
- High-voltage rectification circuits
- Isolated DC power supply designs
Procurement Notes
Verify the specific voltage rating suffix (60, 80, or 100) against the required circuit blocking voltage. Confirm that the Three Tower isolation type matches the thermal and electrical insulation requirements of the target application. Ensure mounting hardware compatibility with the specified terminal configuration before procurement.
Selection Notes
Select this component when a 1000 V blocking capability and 200 A continuous current are required in an isolated form factor. The low thermal resistance facilitates efficient heat dissipation in high-power environments. Consider the standard recovery characteristics for applications where switching speed is not the primary constraint.
Part Context
This module belongs to the MSRT200 family of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as 600 V and 800 V, sharing the same 200 A current capacity and Three Tower isolated package structure for consistent mechanical integration.
Replacement Considerations
Direct substitutes include other MSRT200XXAD models with matching voltage ratings. Cross-brand replacements must match the 200 A current, 1000 V rating, and Three Tower isolated package dimensions to ensure physical and electrical compatibility.
FAQ
What is the maximum thermal resistance for the MSRT200100AD?
The maximum thermal resistance from junction to case is 0.35 °C/W per leg.
Is the MSRT200100AD sensitive to electrostatic discharge?
No, the datasheet specifies that the device is not ESD sensitive.
What is the peak forward surge current rating?
The module supports a peak forward surge current of 3000 A per leg under half-sine wave conditions.
