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Product Detailed Parameters
- Description：DIODE MOD GP 1000V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1000 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1000 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRT200100D is a silicon standard recovery diode module from the MSRTA series, manufactured by GeneSiC Semiconductor. It features a three-tower isolated package design with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 1000 V and an average forward current of 200 A per leg. Maximum ratings include a junction temperature range of -55°C to +150°C and a peak forward surge current of 3000 A per leg.
Feature Summary
- Three Tower Package
- Isolation Type Package
- Not ESD Sensitive
Applications
- Standard rectification in power conversion circuits
- Industrial power supplies
- Motor drive applications
Procurement Notes
Verify the specific suffix against official documentation to confirm exact electrical characteristics and packaging options. Confirm availability status as product lifecycle stages may affect supply continuity. Ensure thermal interface materials are compatible with the isolated base plate for proper heat dissipation during installation.
Selection Notes
Select this component for high-voltage applications requiring robust surge capability and electrical isolation. Evaluate thermal resistance requirements based on the maximum junction-to-case rating. Consider the three-tower configuration for space-constrained designs needing multiple isolated terminals.
Part Context
This module belongs to the MSRTA family of silicon standard recovery diodes. The series offers various voltage ratings from 600 V to 1000 V. The MSRT200100D represents the highest voltage variant within the 200 A current class, designed for demanding industrial environments.
Replacement Considerations
MSRT20080D
FAQ
What is the peak forward surge current rating?
The peak forward surge current (IFSM) is rated at 3000 A per leg under half-sine wave conditions.
Does the module have an isolated base plate?
Yes, the MSRT200100D features an electrically isolated base plate as part of its Three Tower Package design.
