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The MSRT200140D is a silicon standard recovery diode module from the MSRT200 series, featuring a three tower package with an electrically isolated base plate. It supports a repetitive peak reverse voltage of 1400 V and an average forward current of 200 A per leg. The device exhibits high surge capability with a peak forward surge current of 3000 A per leg. Operating temperatures range from -55°C to +150°C, with a maximum thermal resistance of 0.35 °C/W at Tj = 150°C.
Verify the specific datasheet version for the MSRT200140D model before procurement. Confirm that the electrical isolation requirements match the application design. Check terminal configuration compatibility with existing mounting hardware. Ensure thermal management solutions align with the specified junction-to-case thermal resistance limits.
Select this component when high surge current handling and electrical isolation are required in a compact three tower form factor. Compare the 1400 V rating against system voltage spikes. Evaluate the 200 A continuous current capacity against load profiles. Consider the standard recovery characteristics for switching frequency requirements.
This module belongs to the MSRT200XXXD family of silicon standard recovery diodes. The series includes variants with reverse voltages ranging from 1200 V to 1600 V. All models share the same three tower package structure and isolation features, differing primarily in their voltage ratings and corresponding forward voltage characteristics.
MSRT200120D
The peak forward surge current is 3000 A per leg.
Yes, the module features an electrically isolated base plate.