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Product Detailed Parameters
- Description：DIODE MOD GP 1600V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1600 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRT200160D is a silicon standard recovery diode module with a repetitive peak reverse voltage of 1600 V and an average forward current of 200 A per leg. It features a three tower package design with an electrically isolated base plate. The maximum instantaneous forward voltage is 1131 mV at 200 A, while the maximum thermal resistance from junction to case is 0.35 °C/W. The device operates within a temperature range of -55 °C to +150 °C and supports a peak forward surge current of 3000 A.
Feature Summary
- Three tower package structure providing high surge capability
- Electrically isolated base plate for safety and mounting flexibility
- Non-ESD sensitive construction for robust handling
Applications
- Industrial power conversion systems
- High voltage rectification circuits
- Motor drive applications
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the 1600 V rating aligns with system voltage requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance. Check for any recent discontinuation notices or alternative sourcing options due to component lifecycle status.
Selection Notes
Select this module when high voltage blocking capability and moderate current ratings are required in an isolated configuration. The three tower package facilitates efficient heat dissipation and mechanical stability. Consider the forward voltage drop and thermal resistance for efficiency calculations in continuous operation scenarios.
Part Context
This component belongs to the MSRT200XXX series of silicon standard recovery diodes. The series offers variants with different voltage ratings ranging from 1200 V to 1600 V. All models share similar current ratings and package dimensions, allowing for design flexibility across different voltage levels within the same product family.
Replacement Considerations
Direct substitutes include other MSRT200XXXD series modules with equivalent voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternatives from different manufacturers.
