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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRT20060D is a silicon standard recovery diode module from the MSRT200 series, manufactured by GeneSiC Semiconductor. It features an electrically isolated base plate and a three-tower package design. The device supports repetitive peak reverse voltages ranging from 600 V to 1000 V, with the specific MSRT20060D variant rated at 600 V. It provides an average forward current of 200 A per leg and exhibits high surge capability with a peak forward surge current of 3000 A. The module operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Features an electrically isolated base plate for enhanced safety and thermal management.
- Utilizes a three-tower package configuration designed for high surge current handling.
- Constructed as a silicon standard recovery diode suitable for general rectification applications.
Applications
- Industrial power supply systems requiring isolated rectification.
- Inverter circuits in motor drives and frequency converters.
- DC-DC converter topologies utilizing standard recovery characteristics.
Procurement Notes
Verify the exact voltage rating suffix (e.g., 60D vs 80D vs 100D) against the application's required blocking voltage, as the MSRT200 series spans multiple voltage grades. Confirm that the three-tower mounting style aligns with the available heatsink infrastructure. Ensure compliance with RoHS directives if required by the end product specifications.
Selection Notes
Select this component when an electrically isolated diode module is necessary for high-current applications up to 200 A. The standard recovery characteristic makes it suitable for lower-frequency switching environments compared to ultra-fast variants. Consider the thermal resistance and maximum junction temperature limits during heatsink design to ensure reliable operation under continuous load conditions.
Part Context
This module belongs to the MSRT200(A)D family, which includes variants with different voltage ratings such as MSRT20080D and MSRT200100D. All members share the same 200 A current rating and three-tower physical footprint, allowing for pin-compatible design upgrades or downgrades based on voltage requirements without changing the mechanical layout.
Replacement Considerations
Direct replacements must match the 200 A current rating, 600 V blocking voltage, and three-tower isolation package. Verify that substitute modules maintain similar thermal resistance values and standard recovery characteristics to ensure circuit compatibility.
