MSRT250140A

MSRT250140A

$37.30
  • Description:DIODE MOD GP 1400V 250A 3TOWER
  • Series:-

SKU:7bb95d74d74c Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1400V 250A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1400 V
  • Current - Average Rectified (Io) (per Diode):250A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 250 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:15 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRT250140A

Overview

The MSRT250140A is a high-power diode module manufactured by GeneSiC Semiconductor, designed for demanding industrial applications. It features a standard recovery silicon construction with a maximum repetitive peak reverse voltage of 1400 V and an average forward current rating of 250 A. The device utilizes a three-tower package configuration, facilitating efficient thermal management and robust mechanical mounting. This component is engineered to provide reliable performance in high-voltage power conversion systems where durability and electrical isolation are critical requirements.

Feature Summary

  • Standard recovery silicon technology for robust high-power rectification
  • Three-tower package design enabling effective heat dissipation
  • High voltage and current ratings suitable for heavy-duty industrial environments

Applications

  • Industrial motor drives and variable frequency drives
  • High-power DC-DC converter circuits
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to ensure accurate part identification. Confirm that the procurement source provides valid traceability and authenticity guarantees. Cross-reference the datasheet revision date to ensure compatibility with current design specifications. Ensure proper handling procedures are followed due to the sensitive nature of semiconductor components.

Selection Notes

Select this component when designing systems requiring high voltage blocking capabilities combined with substantial continuous current handling. Evaluate the thermal resistance characteristics of the three-tower package against the application's cooling infrastructure. Consider the standard recovery speed relative to switching frequency requirements to balance efficiency and electromagnetic interference levels.

Part Context

This module belongs to the MSRT series of discrete power diodes from GeneSiC Semiconductor. The series focuses on delivering high-performance silicon solutions for power electronics. These modules are widely utilized in sectors such as renewable energy, transportation, and industrial automation where reliable power switching is essential.

Replacement Considerations

Consult official cross-reference guides for compatible alternatives. Verify that any substitute matches the 1400 V reverse voltage and 250 A current ratings. Ensure the replacement maintains the three-tower package form factor for direct mechanical integration.

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$37.30
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