MSRT250160A

MSRT250160A

$37.30
  • Description:DIODE MOD GP 1600V 250A 3TOWER
  • Series:-

SKU:c34970ae3c81 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1600V 250A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1600 V
  • Current - Average Rectified (Io) (per Diode):250A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 250 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:15 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRT250160A

Overview

The MSRT250160A is a silicon power Schottky rectifier manufactured by GeneSiC Semiconductor. It features a high current rating of 250 A and a repetitive peak reverse voltage of 160 V. The device utilizes an isolated base plate package design, providing electrical isolation for the cathode connection. Key electrical characteristics include a maximum forward voltage of 1.13 V at rated current and a non-repetitive peak forward surge current capability of 4700 A. The component is designed for operation within a junction temperature range of -40 °C to +175 °C.

Feature Summary

  • High surge current capability for robust performance under transient conditions
  • Electrically isolated base plate construction for simplified thermal management
  • Low forward voltage drop for improved system efficiency
  • High temperature stability suitable for demanding environments

Applications

  • DC/DC converters
  • Free-wheeling diodes in motor drives
  • Power factor correction circuits
  • Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific suffix codes on the datasheet to confirm exact packaging and marking variations. Confirm that the isolated base plate requirement aligns with your heatsinking strategy. Ensure the voltage and current derating curves are reviewed for your specific ambient temperature conditions before finalizing the bill of materials.

Selection Notes

Select this component when high current handling and low conduction losses are critical. The isolated base plate eliminates the need for electrically insulating thermal pads, reducing thermal resistance. Compare the forward voltage specifications against alternative rectifiers to ensure optimal efficiency for the target load current and switching frequency requirements.

Part Context

This part belongs to the MSRT series of silicon power Schottky rectifiers from GeneSiC. These devices are engineered for high-efficiency power conversion applications where standard PN junction diodes may exhibit higher reverse recovery losses. The series offers various voltage ratings to suit different bus voltage levels while maintaining high current capacity.

Replacement Considerations

Direct replacements must match the 250 A current rating, 160 V blocking voltage, and isolated base plate form factor. Verify that any substitute component meets or exceeds the 4700 A surge current rating and operates within the same temperature range. Check pinout compatibility if mounting dimensions are constrained.

MSRT250160AMSRT250160A
$37.30
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