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Product Detailed Parameters
- Description：DIODE MODULE GEN PURP 1000V 200A
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1000 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1000 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MSRTA200100D is a silicon standard recovery diode module from the MSRTA series, rated for a repetitive peak reverse voltage of 1000 V and an average forward current of 200 A per leg. It utilizes a heavy three tower package with an electrically isolated base plate. The device supports an operating temperature range from -55 °C to +150 °C and features a maximum thermal resistance of 1.1 °C/W junction-to-case per leg. Peak forward surge current capability reaches 3000 A per leg under specified conditions.
Feature Summary
- Heavy three tower package design providing high surge capability
- Electrically isolated base plate construction
- Not sensitive to electrostatic discharge
Applications
- Industrial power conversion systems
- Inverter circuits requiring high voltage isolation
- Standard recovery rectification in heavy-duty applications
Procurement Notes
Verify the specific voltage rating suffix (e.g., 60, 80, or 100) against the required circuit blocking voltage. Confirm that the three tower terminal configuration matches the PCB layout or busbar interface. Ensure thermal management solutions accommodate the 1.1 °C/W junction-to-case thermal resistance specification for reliable operation at maximum temperatures.
Selection Notes
Select this component when a 1000 V blocking capability and 200 A continuous current per leg are required. The isolated base plate is essential for applications needing galvanic separation between the heat sink and the circuit ground. Consider the physical dimensions of the heavy three tower package to ensure adequate clearance and creepage distances within the enclosure design.
Part Context
This part belongs to the MSRTA series of silicon standard recovery diode modules manufactured by GeneSiC Semiconductor. The series spans voltage ratings from 600 V to 1000 V, sharing common mechanical and thermal characteristics while differing in reverse voltage specifications. The MSRTA200100D represents the highest voltage variant in the 200 A current class of this family.
Replacement Considerations
Cross-reference with other manufacturers offering 1000 V, 200 A three-tower isolated diode modules. Verify compatibility of pinout configurations and mounting hole patterns before substitution. Check if alternative parts meet the same 1.1 °C/W thermal resistance and -55 °C to +150 °C operating temperature range requirements.
