MSRTA200120AD

MSRTA200120AD

$60.28
  • Description:DIODE MOD GP 1200V 200A 3TOWER
  • Series:-

SKU:e244e0b319f3 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1200V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRTA200120AD

Overview

The MSRTA200120AD is a silicon standard recovery diode module from GeneSiC Semiconductor. It features an average forward current of 200 A per leg and offers repetitive peak reverse voltage ratings of 1200 V or 1600 V. The device utilizes a heavy three tower package with an electrically isolated base plate. Key electrical characteristics include a maximum instantaneous forward voltage of 0.35 V at Tj = 25 °C and a peak forward surge current of 3000 A per leg. Thermal resistance from junction to case is 1.1 °C/W per leg, supporting operation within a temperature range of -55 °C to +150 °C.

Feature Summary

  • Heavy three tower package design providing high surge capability
  • Electrically isolated base plate for enhanced safety and thermal management
  • Standard recovery silicon technology optimized for robust performance

Applications

  • Industrial power conversion systems
  • High-voltage rectification circuits
  • Motor drive applications

Procurement Notes

Verify the specific voltage rating (1200 V or 1600 V) required for your application against the datasheet specifications. Confirm that the screw mount installation style matches your mechanical design constraints. Ensure compatibility with the specified thermal resistance values for your heat sink solution. Check for any RoHS compliance documentation if environmental regulations apply to your manufacturing process.

Selection Notes

Select this component when high surge current handling and electrical isolation are critical requirements. The 200 A per leg rating suits medium-to-high power applications. Consider the 1.1 °C/W thermal resistance for effective heat dissipation planning. The standard recovery characteristic makes it suitable for general-purpose rectification rather than high-frequency switching scenarios requiring ultra-fast recovery.

Part Context

This module belongs to the MSRTA series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 1200 V to 1600 V reverse voltage. These modules are designed for industrial applications requiring reliable rectification in harsh environments. The heavy three tower package provides mechanical stability and efficient thermal transfer capabilities.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

MSRTA200120ADMSRTA200120AD
$60.28
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