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The MSRTA200120AD is a silicon standard recovery diode module from GeneSiC Semiconductor. It features an average forward current of 200 A per leg and offers repetitive peak reverse voltage ratings of 1200 V or 1600 V. The device utilizes a heavy three tower package with an electrically isolated base plate. Key electrical characteristics include a maximum instantaneous forward voltage of 0.35 V at Tj = 25 °C and a peak forward surge current of 3000 A per leg. Thermal resistance from junction to case is 1.1 °C/W per leg, supporting operation within a temperature range of -55 °C to +150 °C.
Verify the specific voltage rating (1200 V or 1600 V) required for your application against the datasheet specifications. Confirm that the screw mount installation style matches your mechanical design constraints. Ensure compatibility with the specified thermal resistance values for your heat sink solution. Check for any RoHS compliance documentation if environmental regulations apply to your manufacturing process.
Select this component when high surge current handling and electrical isolation are critical requirements. The 200 A per leg rating suits medium-to-high power applications. Consider the 1.1 °C/W thermal resistance for effective heat dissipation planning. The standard recovery characteristic makes it suitable for general-purpose rectification rather than high-frequency switching scenarios requiring ultra-fast recovery.
This module belongs to the MSRTA series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 1200 V to 1600 V reverse voltage. These modules are designed for industrial applications requiring reliable rectification in harsh environments. The heavy three tower package provides mechanical stability and efficient thermal transfer capabilities.
Public confirmed substitute part numbers are not available in the provided documentation.