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Product Detailed Parameters
- Description：DIODE MODULE GEN PURP 1200V 200A
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 200 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：10 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MSRTA200120D is a silicon standard recovery diode module from GeneSiC Semiconductor, rated for an average forward current of 200 A per leg. It offers repetitive peak reverse voltage options of 1200 V and 1600 V. The device features a heavy three tower package with an electrically isolated base plate. Maximum thermal resistance from junction to case is 1.1 °C/W per leg. Operating temperature ranges from -55 °C to +150 °C. Peak forward surge current is 3000 A per leg at Tj = 25 °C.
Feature Summary
- Heavy three tower package design providing high surge capability
- Electrically isolated base plate configuration
- Not ESD sensitive construction
Applications
- Industrial power supplies
- Motor drive rectification
- Inverter circuits
Procurement Notes
Verify the specific voltage rating suffix (1200V vs 1600V) against the datasheet before ordering. Confirm the package terminal configuration matches the schematic requirements. Check for RoHS compliance status in the latest documentation. Ensure mounting hardware compatibility with the screw mount style. Validate thermal interface material specifications for the application.
Selection Notes
Select this module for applications requiring robust surge handling and electrical isolation. The 200 A rating suits medium to high power systems. Consider the 1.1 °C/W thermal resistance for heatsink design. The wide operating temperature range supports harsh environments. Verify if the standard recovery characteristics meet the switching frequency requirements.
Part Context
This component belongs to the MSRTA series of silicon standard recovery diode modules. The series includes variants ranging from 1200 V to 1600 V reverse voltage. All models share the same heavy three tower package and 200 A current rating. The series is designed for industrial power conversion applications.
Replacement Considerations
Cross-reference with other 200 A, 1200 V/1600 V three-tower diode modules. Verify pinout compatibility for direct replacement. Check thermal resistance and forward voltage drop differences.
