MSRTA200140AD

MSRTA200140AD

$60.28
  • Description:DIODE MOD GP 1400V 200A 3TOWER
  • Series:-

SKU:29fb062e6bd7 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MOD GP 1400V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1400 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 1400 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRTA200140AD

Overview

The MSRTA200140AD is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage (VRRM) of 1400 V and a DC blocking voltage of 1600 V. It provides an average forward current (IF(AV)) of 200 A per leg. The maximum instantaneous forward voltage (VF) is 1.1 V at Tj = 25 °C, while the maximum instantaneous reverse current (IR) is 10 µA at rated DC blocking voltage. The junction-to-case thermal resistance (RΘjc) is 0.35 °C/W per leg. Operating temperature ranges from -55 °C to 150 °C.

Feature Summary

  • Heavy three tower package design for high surge capability
  • Electrically isolated base plate configuration

Applications

    Procurement Notes

    Verify the specific part number against official manufacturer documentation to confirm electrical ratings and package dimensions. Ensure compatibility with required thermal management solutions given the specified thermal resistance values. Confirm that the isolated base plate meets system insulation requirements. Check for any specific handling precautions despite the non-ESD sensitive designation.

    Selection Notes

    Select this component for applications requiring robust standard recovery diodes with high surge current handling capabilities. The electrically isolated base plate facilitates mounting on insulated heat sinks or chassis without additional insulators. Consider the 1400 V rating for medium-voltage power conversion circuits where standard silicon performance is sufficient.

    Part Context

    This module belongs to the MSRTA200 series, which includes variants ranging from 1200 V to 1600 V VRRM. All models in this series share the same heavy three tower package and electrical isolation features. The 'AD' suffix typically denotes specific packaging or terminal configurations within the product line, distinct from other suffixes like 'ADR' or 'D'.

    Replacement Considerations

    Direct replacements must match the 1400 V VRRM, 200 A IF(AV), and three tower isolated package form factor. Verify thermal resistance and forward voltage characteristics to ensure equivalent circuit performance. Cross-reference with other manufacturers offering similar isolated standard recovery diode modules.

    FAQ

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