MSRTA200160D

Overview

The MSRTA200160D is a silicon standard recovery diode module from the MSRTA series, rated for a repetitive peak reverse voltage of 1600 V and an average forward current of 200 A per leg. It features a heavy three tower package with an electrically isolated base plate. The maximum instantaneous forward voltage is 1.1 V at Tj = 25 °C, and the junction-to-case thermal resistance is 0.35 °C/W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Heavy three tower package design providing high surge capability
• Electrically isolated base plate construction
• Not ESD sensitive

Applications

• Industrial power conversion systems
• Motor drive rectification
• High voltage DC link applications

Procurement Notes

Verify the specific voltage rating suffix (160) against the required circuit blocking voltage. Confirm the terminal configuration matches the PCB layout or busbar requirements. Check for RoHS compliance status in the latest datasheet revision. Ensure mounting torque specifications are followed during installation to maintain thermal performance and mechanical integrity.

Selection Notes

Select this component when a 1600 V rating is required within the MSRTA family. Compare thermal resistance values against system cooling capabilities. Verify that the 200 A per leg current rating meets the continuous load requirements. Consider the isolation type package if galvanic isolation between the heatsink and circuit is necessary.

Part Context

This part belongs to the MSRTA200XXXD series, which includes variants ranging from 1200 V to 1600 V. All models share the same 200 A per leg current rating and physical package dimensions. The series utilizes silicon standard recovery technology for robust performance in general-purpose rectification applications.

Replacement Considerations

Direct substitutes include other MSRTA200160D units from GeneSiC Semiconductor. Cross-brand replacements require matching the 1600 V rating, 200 A current, and Three Tower Iso package footprint.