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Product Detailed Parameters
- Description：DIODE MODULE GEN PURP 1000V 300A
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1000 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 300 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 µA @ 1000 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MSRTA300100D is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate and screw mount installation. The device supports a repetitive peak reverse voltage of 1000 V and a DC blocking voltage of 1000 V. Each leg provides an average forward current of 300 A, resulting in a total module rating of 600 A. The maximum instantaneous forward voltage per leg is 2.0 V at 300 A. Peak forward surge current reaches 3800 A per leg. Thermal resistance from junction to case is 0.28 °C/W per leg. Operating temperature ranges from -55 °C to +150 °C.
Feature Summary
- Heavy three tower package design for high surge capability
- Electrically isolated base plate construction
- Standard recovery silicon technology
Applications
- Industrial power conversion systems
- High voltage rectification circuits
- Motor drive applications
Procurement Notes
Verify the specific part number against official GeneSiC Semiconductor documentation to confirm electrical ratings and physical dimensions. Check for end-of-life status or discontinuation notices prior to procurement. Ensure thermal management solutions match the specified junction-to-case thermal resistance requirements for reliable operation within the stated temperature range.
Selection Notes
Select this component for applications requiring high voltage isolation and robust surge handling capabilities. The three tower configuration facilitates efficient heat dissipation and mechanical mounting. Verify that the system operating temperatures remain within the specified -55 °C to +150 °C range to ensure long-term reliability and performance stability under load conditions.
Part Context
This module belongs to the MSRTA300 series of silicon standard recovery diodes. The series includes variants with different voltage ratings ranging from 600 V to 1000 V. All models share the same physical package and thermal characteristics while differing in their peak reverse voltage specifications. The MSRTA300100D represents the highest voltage option in this specific current-rated family.
Replacement Considerations
MSRTA300100AD
FAQ
What is the peak forward surge current rating?
The peak forward surge current is 3800 A per leg for an 8.3 ms half-sine wave pulse.
Is the base plate electrically isolated?
Yes, the module features an electrically isolated base plate design.
What is the maximum thermal resistance?
The maximum thermal resistance from junction to case is 0.28 °C/W per leg.
