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Product Detailed Parameters
- Description：DIODE MODULE GEN PURP 1200V 300A
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 300 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MSRTA300120D is a silicon standard recovery diode module rated for 1200 V repetitive peak reverse voltage and 300 A average forward current per leg. It utilizes a heavy three tower isolation package with an electrically isolated base plate. The device supports junction temperatures from -55 °C to +150 °C, features a maximum thermal resistance of 0.28 °C/W per leg, and offers a peak forward surge current capability of 3800 A.
Feature Summary
- Heavy three tower package design providing high surge capability
- Electrically isolated base plate construction
- Standard silicon recovery characteristics
Applications
- Industrial power conversion systems
- High voltage rectification circuits
- Isolated power supply modules
Procurement Notes
Verify the specific datasheet version and manufacturer documentation before integration. Confirm that the component meets all required electrical ratings for the target application environment. Check for any end-of-life notifications or discontinuation statuses associated with this part number to ensure long-term availability and support.
Selection Notes
Select this module when high current handling and voltage isolation are required in a compact form factor. The three tower architecture supports robust performance under surge conditions. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation at elevated temperatures.
Part Context
This component belongs to the MSRTA series of silicon diode modules, which includes variants ranging from 1200 V to 1600 V reverse voltage ratings. All models in this family share the same 300 A current rating and heavy three tower package style, differing primarily in their blocking voltage specifications.
Replacement Considerations
Compatible substitutes include other MSRTA300XXXD series parts with matching voltage ratings. Verify terminal configuration and package dimensions to ensure mechanical compatibility during replacement.
