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The MSRTA30060A is a silicon rectifier module manufactured by GeneSiC Semiconductor. It features a common cathode configuration with two elements, rated for a maximum repetitive reverse voltage of 600 V and an average forward current of 400 A per diode. The device exhibits a typical forward voltage drop of 1.2 V at 400 A and a maximum reverse leakage current of 25 µA at 600 V. Designed for standard recovery applications with a recovery time exceeding 500 ns, it operates within a junction temperature range of -55°C to +150°C and utilizes a three-tower baseplate mounting style.
Verify the specific manufacturer source, as GeneSiC Semiconductor assets have been acquired by Navitas Semiconductor. Confirm that the component meets current RoHS compliance standards and check for any End-of-Life notifications or discontinuation notices issued by the successor entity before finalizing procurement plans.
Select this component for high-current applications requiring standard recovery characteristics rather than ultra-fast switching. Ensure the cooling system accommodates the thermal dissipation requirements of the three-tower package. Verify that the 600V rating aligns with the peak inverse voltage stresses present in the target circuit topology.
This part belongs to the MSRTA series of discrete semiconductor modules from GeneSiC Semiconductor. These modules are engineered for robust performance in demanding power electronics environments. The series typically includes various voltage and current ratings to support diverse industrial and commercial power conversion needs.
Publicly confirmed substitute part numbers for the MSRTA30060A were not identified in the available documentation.