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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：1.1 V @ 300 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRTA30060AD is a silicon standard recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three-tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage (VRRM) of 600 V and a DC blocking voltage of 1000 V. It provides an average forward current (IF(AV)) of 300 A per leg. Key electrical parameters include a maximum instantaneous forward voltage of 2.0 V at Tj = 25 °C, a maximum instantaneous reverse current of 10 mA at rated DC blocking voltage, and a peak forward surge current of 3800 A. The junction-to-case thermal resistance is 0.28 °C/W.
Feature Summary
- Heavy three-tower package design for high surge capability
- Electrically isolated base plate construction
- Not ESD sensitive
Applications
- Industrial power supplies
- Inverter circuits
- Motor drive systems
Procurement Notes
Verify the specific voltage rating suffix against the datasheet to confirm the 600 V or 1000 V configuration. Ensure the ordering code matches the required terminal configuration and package variant. Confirm that the supplier provides documentation consistent with the GeneSiC Semiconductor specifications for this series.
Selection Notes
Select this component for applications requiring high current handling and electrical isolation. The 300 A rating per leg suits medium to high-power conversion tasks. Consider the 0.28 °C/W thermal resistance for heatsink design. Verify operating temperature limits align with the -55 °C to +150 °C range specified in the datasheet.
Part Context
This part belongs to the MSR TA300 series of silicon standard recovery diodes from GeneSiC Semiconductor. The series includes variants ranging from 600 V to 1000 V reverse voltage. These modules are designed for robust performance in industrial environments, utilizing a heavy three-tower package structure.
Replacement Considerations
Cross-reference with other GeneSiC MSR TA300 series modules such as MSRTA30080AD or MSRTA300100AD if higher voltage ratings are needed. Ensure any substitute maintains the same 300 A current rating and isolated base plate architecture.
