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Product Detailed Parameters
- Description：DIODE MOD GP 1200V 400A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：400A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 400 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MSRTA400120A is a silicon standard recovery diode array manufactured by GeneSiC Semiconductor. It features a dual common cathode configuration housed in a heavy three tower base mount package. The device supports a maximum repetitive peak reverse voltage of 1200 V and handles a continuous forward current of 400 A per diode. Key electrical characteristics include a forward voltage of 1.2 V at 400 A and a thermal resistance from junction to case of 0.14 °C/W. The component operates within a junction temperature range of -40°C to 175°C.
Feature Summary
- Dual common cathode diode array configuration
- Heavy three tower package design for high surge capability
- Silicon standard recovery technology
Applications
- High power rectification circuits
- Industrial power conversion systems
- Medium to high voltage DC applications
Procurement Notes
Verify the specific part number suffix against official GeneSiC Semiconductor documentation to ensure correct voltage rating and package variant. Confirm that the ordering code matches the required 1200 V specification. Cross-reference datasheet revision dates to validate thermal and electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring robust surge handling and high current capacity in a compact base mount form factor. Ensure the system design accommodates the specified thermal resistance and operating temperature limits. Verify compatibility with the intended circuit topology, specifically the common cathode arrangement, during the initial engineering phase.
Part Context
This component belongs to the MSRTA series of silicon standard recovery diodes offered by GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as 1400 V and 1600 V options, all sharing similar current handling capabilities and packaging styles designed for demanding power electronics environments.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Generic replacements may not match the specific thermal resistance or surge current ratings of the original three tower package design.
