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The MSRTA400140(A) is a silicon standard recovery diode array manufactured by GeneSiC Semiconductor. It features a twin tower package configuration with one pair of common cathode diodes. The device supports a maximum repetitive peak reverse voltage (VRRM) of 1400 V and a continuous forward current (IF) of 400 A per diode. Key electrical characteristics include a forward voltage (VF) of 1.2 V at 400 A and a thermal resistance (RthJC) of 0.14 °C/W. The component operates within a junction temperature range of -40 to 175 °C.
Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical tolerances and packaging specifications. Ensure that the procurement channel provides authentic components directly traceable to GeneSiC Semiconductor or authorized distributors. Confirm compliance with relevant environmental directives prior to integration into final assemblies.
Select this component when high voltage blocking capabilities and substantial current handling are required in a compact form factor. The low thermal resistance facilitates efficient heat dissipation in constrained spaces. Evaluate the operating junction temperature limits to ensure compatibility with the intended thermal management strategy and ambient conditions of the target application environment.
This part belongs to the MSRTA400 series, which includes variants rated for 1200 V, 1400 V, and 1600 V. All models share identical physical dimensions and thermal characteristics while differing primarily in their voltage ratings. The series utilizes a standardized twin tower mounting style suitable for screw-down installation on heatsinks.
Direct substitutes within the same family include the MSRTA400120(A) and MSRTA400160(A). These alternatives offer identical mechanical footprints and current ratings but differ in maximum reverse voltage specifications. Verify voltage requirements before substituting.