MSRTA40060A

MSRTA40060A

$41.44
  • Description:DIODE MODULE GP 600V 400A 3TOWER
  • Series:-

SKU:4b3def6175a6 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 600V 400A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):400A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 400 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRTA40060A

Overview

The MSRTA40060(A) is a silicon standard recovery diode array manufactured by GeneSiC Semiconductor. It features a one-pair common cathode configuration housed in a heavy three tower base-mounted package. The device supports a maximum repetitive peak reverse voltage of 600 V and a continuous forward current of 400 A per diode. Key electrical parameters include a forward voltage of 1.2 V at 400 A and a thermal resistance from junction to case of 0.14 °C/W. The component operates within a temperature range of -40°C to 175°C.

Feature Summary

  • High surge capability designed for demanding power applications
  • Heavy three tower package construction for robust mechanical stability
  • Standard silicon recovery diode technology

Applications

  • Industrial power conversion systems
  • High-current rectification circuits
  • Power supply modules requiring high surge tolerance

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical ratings and packaging details. Ensure compatibility with existing thermal management solutions given the specified thermal resistance values. Confirm that the base-mount installation method aligns with the target chassis design requirements before finalizing procurement orders.

Selection Notes

Select this component when a high-current, high-voltage silicon diode array is required for base-mounted applications. The heavy three tower package provides superior mechanical strength compared to standard modules. Consider the 0.14 °C/W thermal resistance for heat sink sizing calculations to maintain junction temperatures within the specified operating range during continuous operation.

Part Context

This part belongs to the MSRTA400 series of silicon standard recovery diodes from GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as 800 V and 1000 V options, all sharing the same 400 A current rating and physical package dimensions. This family is designed for industrial applications requiring reliable high-power rectification.

Replacement Considerations

Direct replacements must match the 600 V rating, 400 A current capacity, and three tower package footprint. Verify that substitute components offer equivalent or lower thermal resistance and compatible forward voltage characteristics to ensure system performance remains unchanged.

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