SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MSRTA40060(A) is a silicon standard recovery diode array manufactured by GeneSiC Semiconductor. It features a one-pair common cathode configuration housed in a heavy three tower base-mounted package. The device supports a maximum repetitive peak reverse voltage of 600 V and a continuous forward current of 400 A per diode. Key electrical parameters include a forward voltage of 1.2 V at 400 A and a thermal resistance from junction to case of 0.14 °C/W. The component operates within a temperature range of -40°C to 175°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical ratings and packaging details. Ensure compatibility with existing thermal management solutions given the specified thermal resistance values. Confirm that the base-mount installation method aligns with the target chassis design requirements before finalizing procurement orders.
Select this component when a high-current, high-voltage silicon diode array is required for base-mounted applications. The heavy three tower package provides superior mechanical strength compared to standard modules. Consider the 0.14 °C/W thermal resistance for heat sink sizing calculations to maintain junction temperatures within the specified operating range during continuous operation.
This part belongs to the MSRTA400 series of silicon standard recovery diodes from GeneSiC Semiconductor. The series includes variants with different voltage ratings, such as 800 V and 1000 V options, all sharing the same 400 A current rating and physical package dimensions. This family is designed for industrial applications requiring reliable high-power rectification.
Direct replacements must match the 600 V rating, 400 A current capacity, and three tower package footprint. Verify that substitute components offer equivalent or lower thermal resistance and compatible forward voltage characteristics to ensure system performance remains unchanged.