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The MSRTA40080(A) is a silicon standard recovery diode array featuring one pair of common cathodes. It has a maximum repetitive peak reverse voltage (VRRM) of 800 V and supports a continuous forward current (IF) of 400 A per diode. The device utilizes a heavy three-tower baseplate package for mounting. Key electrical characteristics include a forward voltage (VF) of 1.2 V at 400 A and a thermal resistance (RthJC) of 0.14 °C/W. Operating junction temperature ranges from -40°C to 175°C, with a storage temperature range of -40°C to 175°C.
Verify the specific suffix designation against official GeneSiC Semiconductor documentation to confirm exact electrical tolerances and packaging variations. Ensure thermal interface materials are compatible with the three-tower baseplate mounting style. Cross-reference datasheet revision dates to validate parameter consistency before integration into final designs.
Select this component for applications requiring 800 V blocking voltage and 400 A continuous current handling. The low thermal resistance facilitates efficient heat dissipation in high-power environments. Consider the standard recovery speed for general-purpose rectification where ultra-fast switching is not critical. Evaluate system voltage margins against the 800 V rating.
This part belongs to the MSRTA400 series by GeneSiC Semiconductor, which includes variants rated at 600 V, 800 V, and 1000 V. All series members share identical current ratings and physical packaging dimensions, differing primarily in their reverse voltage capabilities. The manufacturer specializes in silicon carbide and silicon power devices.
Direct substitutes within the same series include MSRTA40060(A) for lower voltage applications or MSRTA400100(A) for higher voltage requirements. Verify that replacement parts maintain the same 400 A current rating and three-tower package footprint to ensure mechanical compatibility.