MSRTA50080A

MSRTA50080A

$71.83
  • Description:DIODE MODULE GP 800V 500A 3TOWER
  • Series:-

SKU:d1d3ddebef07 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 800V 500A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io) (per Diode):500A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 500 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MSRTA50080A

Overview

The MSRTA50080A is a high-power diode array manufactured by GeneSiC Semiconductor, designed for robust industrial applications. It features a common cathode configuration with two diodes housed in a single base-mounted package. The device supports a maximum DC reverse voltage of 800 V and an average rectified forward current of 500 A per diode. It utilizes a three-tab TO-247AA compatible package for efficient thermal management. Key electrical parameters include a forward voltage of 1.2 V at 500 A and a leakage current of 25 µA at 600 V. The junction temperature range spans from -55°C to 150°C, ensuring reliable operation under demanding conditions.

Feature Summary

  • High-current capability with 500 A average rectified current per diode
  • Robust thermal design via base-mounted three-tab packaging
  • Common cathode configuration simplifies circuit layout
  • Wide operating temperature range for harsh environments

Applications

  • Industrial motor drives and inverters
  • High-power DC power supplies
  • Uninterruptible power supply (UPS) systems
  • Welding equipment power stages

Procurement Notes

Verify the specific suffix designation against official GeneSiC Semiconductor datasheets to confirm exact electrical tolerances and pinout configurations. Ensure that the procurement channel provides authentic components with traceable manufacturing lot codes. Confirm compliance with relevant industry standards required for your specific application environment before finalizing orders.

Selection Notes

Select this component when applications require high current handling exceeding standard discrete diode limits. The common cathode arrangement reduces board space compared to individual diodes. Evaluate thermal resistance requirements carefully due to the high current density. Consider the 800 V blocking voltage as the primary constraint for system design margins.

Part Context

This part belongs to the MSRTA series of high-power diode arrays from GeneSiC Semiconductor. The series is engineered for heavy-duty power conversion tasks where reliability and efficiency are critical. The manufacturer specializes in silicon carbide and silicon-based high-power semiconductors for industrial and defense sectors.

Replacement Considerations

Consult official cross-reference guides for direct replacements. Verify that substitute parts match the 500 A current rating, 800 V voltage rating, and three-tab package dimensions to ensure mechanical and electrical compatibility without redesigning the heat sink interface.

FAQ

What is the maximum forward voltage drop at rated current?

The typical forward voltage is 1.2 V when conducting 500 A.

How many diodes are contained within the MSRTA50080A package?

The device contains a dual diode array configured in a common cathode setup.

MSRTA50080AMSRTA50080A
$71.83
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