RF Diode MSS30-148-E25 product image

MSS30-148-E25

  • Description:RF DIODE SCHOTTKY 2V 100MW E25
  • Series:-

SKU:0bcc8711297c Category: Brand:

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MSS30-148-E25 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 2V 100MW E25. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MSS30-148-E25

  • Description:RF DIODE SCHOTTKY 2V 100MW E25
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):2V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.31pF @ 0V, 1MHz
  • Resistance @ If, F:7Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):100 mW
  • Operating Temperature:-65°C ~ 150°C
  • Package / Case:E25
  • Supplier Device Package:E25
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MSS30-148-E25

MSS30-148-E25

RF Diode Overview

The MSS30-148-E25 is a single junction low barrier silicon Schottky diode from the MSS30 series, packaged in the E25 outline. It operates with a typical forward voltage of 0.27 V and a minimum breakdown voltage of 2 V. The device features a typical capacitance range of 0.12 to 0.15 pF, a typical series resistance of 7 Ω, and a maximum differential resistance of 15 Ω. Its typical cutoff frequency is 190 GHz. Electrical specifications are measured at TA = 25°C with test conditions including IF = 1 mA, IR = 10 µA, VR = 0 V, F = 1 MHz, and I = 5 mA.

RF Diode Feature Summary

  • Low barrier silicon Schottky technology optimized for mixer performance
  • High figure of merit (FCO) achieved through proprietary fabrication processes
  • Available in chip, beam lead, and packaged configurations

RF Diode Applications

  • RF and microwave mixer circuits
  • Wireless power detection systems
  • Signal conditioning applications

RF Diode Procurement Notes

Verify the specific package outline and electrical tolerances against the official datasheet before ordering. Confirm that the operating temperature range and power dissipation limits align with your system requirements. Ensure proper handling procedures are followed due to the sensitivity of Schottky junctions.

RF Diode Selection Notes

Select this component when high-frequency mixing performance is required with low forward voltage drop. Compare the typical capacitance and series resistance values against circuit impedance matching needs. Consider the available screening options if reliability standards such as MIL-PRF-19500 are necessary for the application.

RF Diode Part Context

This part belongs to the MSS30-xxx-x Series of low barrier silicon Schottky diodes manufactured by MACOM Technology Solutions. The series offers various configuration options including single junction, anti-parallel pairs, and ring quads to suit different RF circuit topologies.

RF Diode Replacement Considerations

Direct replacements within the same series include MSS30-142-E25 and MSS30-154-E25, which share the E25 package but differ in forward voltage and capacitance characteristics. Verify compatibility with existing circuit designs before substitution.

RF Diode FAQ

What is the typical cutoff frequency for the MSS30-148-E25?

The typical cutoff frequency is 190 GHz.

What is the minimum breakdown voltage rating?

The minimum breakdown voltage is 2 V.

Is high-reliability screening available for this component?

Yes, Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 is available.

MSS30-148-E25MSS30-148-E25

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