MSS30-154-B10B

RF Diode Overview

The MSS30-154-B10B is a single-junction low barrier silicon Schottky diode in the B10B beam lead outline. It features a typical forward voltage of 0.25 V and a minimum breakdown voltage of 2 V. The device exhibits a typical junction capacitance of 0.22 pF with a maximum of 0.25 pF, measured at 0 V reverse bias. Typical series resistance is 3 Ω, while maximum differential resistance is 12 Ω. The component achieves a typical cutoff frequency of 240 GHz. Electrical specifications are provided at an ambient temperature of 25°C.

RF Diode Feature Summary

• Utilizes proprietary processes on N-type epitaxial substrates to yield high cutoff frequencies for mixer applications.
• Offers matched VF, RD, and CJ options across the series for consistent performance.
• Provides Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 standards upon request.

RF Diode Applications

• Mixer circuits optimized for LO power levels between -3 dBm and +3 dBm per diode.
• High-frequency RF signal processing requiring low barrier characteristics.

RF Diode Procurement Notes

Verify specific ordering suffixes against official datasheets to confirm package type and screening level. Confirm that the B10B outline matches mechanical requirements. Check for availability of Hi-Rel screening options if required by application standards. Ensure compliance with MACOM's terms regarding product changes without notice.

RF Diode Selection Notes

Select this model for applications requiring a 240 GHz cutoff frequency and low junction capacitance. Compare VF and RS values against other MSS30 variants like the 142 or 148 series based on specific loss requirements. Verify that the single-junction configuration meets circuit topology needs compared to tee or ring quad options.

RF Diode Part Context

This component belongs to the MSS30-xxx-x Series of Low Barrier Silicon Schottky Diodes. The series includes chip, beam lead, and packaged devices available in various configurations such as single junction, series tee, anti-parallel pair, and ring quad. The B10B outline specifically denotes a beam lead package format within this family.

RF Diode Replacement Considerations

Other models in the MSS30-xxx-x Series with different numerical codes (e.g., MSS30-142-B10B, MSS30-148-B10B) share the same B10B outline but offer different electrical characteristics. Substitution requires verifying compatibility of VF, CJ, and FCO parameters with the original design intent.

RF Diode FAQ

What is the typical cutoff frequency for the MSS30-154-B10B?

The typical cutoff frequency is 240 GHz, measured under standard test conditions at an ambient temperature of 25°C.

What is the maximum differential resistance specified for this diode?

The maximum differential resistance (RD) is specified as 12 Ω.

Is Hi-Rel screening available for this part number?

Yes, Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 is available for the MSS30 series, subject to specific ordering requirements.