RF Diode MSS30-248-B20 product image

MSS30-248-B20

  • Description:RF DIODE SCHOTTKY 2V 100MW B20
  • Series:-

SKU:cd7c1385c06d Category: Brand:

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MSS30-248-B20 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 2V 100MW B20. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MSS30-248-B20

  • Description:RF DIODE SCHOTTKY 2V 100MW B20
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):2V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.15pF @ 0V, 1MHz
  • Resistance @ If, F:7Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):100 mW
  • Operating Temperature:-65°C ~ 150°C
  • Package / Case:B20
  • Supplier Device Package:B20
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MSS30-248-B20

MSS30-248-B20

RF Diode Overview

The MSS30-248-B20 is a medium barrier silicon Schottky diode manufactured by MACOM Technology Solutions. It is configured as a single-pair series connection device utilizing beamlead packaging. The component operates with a DC current rating of 18,000 mA and features a forward voltage drop of 0.15 V at specified conditions. Reverse leakage current is rated at 15 mA, while the junction capacitance measures 0.27 pF. The device supports a maximum reverse voltage of 2 V and includes a B20 package designation.

RF Diode Feature Summary

  • Utilizes proprietary fabrication processes on N-type epitaxial substrates to achieve industry-leading figures of merit.
  • Configured as a paired series connection device for high-current RF applications.
  • Employs beamlead packaging technology suitable for space and high-reliability environments.

RF Diode Applications

  • Space and high-reliability electronic systems
  • RF power rectification circuits
  • High-frequency mixer applications

RF Diode Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm electrical parameters and mechanical dimensions. Ensure compatibility with system requirements regarding thermal management and mounting constraints. Cross-reference official MACOM resources for accurate ordering information and compliance certifications.

RF Diode Selection Notes

Select this component for applications requiring high-efficiency rectification in RF systems where low forward voltage drop is critical. Consider the beamlead package form factor for integration into compact or specialized assemblies. Evaluate the series pair configuration against circuit topology requirements to ensure optimal performance in high-power scenarios.

RF Diode Part Context

This part belongs to the MSS30 series of medium barrier silicon Schottky diodes from MACOM. The series is characterized by high figures of merit achieved through specialized manufacturing techniques. These diodes are designed for demanding environments, offering robust performance in space and high-reliability contexts compared to standard commercial alternatives.

RF Diode Replacement Considerations

The MSS30-242-B20 is listed as an alternative within the same product family. Verify electrical specifications and package compatibility before substitution. Consult official MACOM documentation for detailed cross-reference data and functional equivalence confirmation.

RF Diode FAQ

What is the forward voltage drop of the MSS30-248-B20?

The forward voltage drop is 0.15 V under specified operating conditions.

What type of packaging does the MSS30-248-B20 use?

It utilizes a beamlead package design, designated as B20.

MSS30-248-B20MSS30-248-B20

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