MSS40-B46-E45R

RF Diode Overview

The MSS40-B46-E45R is a silicon Schottky bridge diode from MACOM Technology Solutions, designed for RF applications. It features a peak reverse voltage of 3V and a forward current rating of 50 mA. The device has a maximum power dissipation of 100 mW and utilizes the E45 beamlead package. This component is part of the MSS40 series, fabricated on N-type epitaxial substrates to achieve high cutoff frequencies.

RF Diode Feature Summary

• Schottky bridge rectifier configuration
• High cutoff frequency performance
• Beamlead packaging

RF Diode Applications

• RF detection circuits
• Mixers
• Demodulators

RF Diode Procurement Notes

Verify the exact suffix against official MACOM documentation to confirm package type and electrical characteristics. Ensure compatibility with existing RF circuit designs regarding thermal management and impedance matching. Confirm availability status through authorized distributors as lead times may vary.

RF Diode Selection Notes

Select this component for applications requiring a compact Schottky bridge with low forward voltage drop. Consider the 3V reverse voltage limit and 50 mA current capacity when designing signal processing stages. Evaluate the E45 package suitability for surface mount assembly processes.

RF Diode Part Context

This device belongs to the MSS40 series of medium barrier silicon Schottky diodes. These components are manufactured using proprietary processes on N-type epitaxial substrates, optimizing them for high-frequency operations in microwave and RF systems.

RF Diode Replacement Considerations

MSS40-448-E45R

RF Diode FAQ

What is the package type?

E45 beamlead

Is it a single diode or a bridge?

Bridge