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MSS50-048-C15 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 4V 100MW CHIP. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MSS50-048-C15
- Description：RF DIODE SCHOTTKY 4V 100MW CHIP
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：4V
- Current - Max：50 mA
- Capacitance @ Vr, F：0.15pF @ 0V, 1MHz
- Resistance @ If, F：7Ohm @ 5mA, 1MHz
- Power Dissipation (Max)：100 mW
- Operating Temperature：-65°C ~ 150°C
- Package / Case：Die
- Supplier Device Package：Chip
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MSS50-048-C15
RF Diode Overview
The MSS50-048-C15 is a silicon K-band mixer diode from MACOM's MSS50 series, fabricated on N-type epitaxial substrates. It features a crossover ring configuration with four elements in a ceramic metal-sealed cofired surface-mount package. Key electrical parameters include a maximum capacitance of 0.125 pF and a maximum power dissipation of 0.075 W. The device operates within a temperature range of -65°C to 150°C.
RF Diode Feature Summary
- Utilizes proprietary fabrication processes for high figure of merit performance
- Employs a crossover ring configuration with four integrated elements
- Constructed with a ceramic metal-sealed cofired surface-mount package
RF Diode Applications
- K-band mixer applications
- Microwave signal processing circuits
- High-frequency detection systems
RF Diode Procurement Notes
Verify the specific datasheet version and manufacturer documentation to confirm exact electrical tolerances and pinout configurations. Ensure compatibility with existing RF circuit designs regarding thermal management and impedance matching. Confirm RoHS compliance status through official manufacturer channels prior to integration into final products.
RF Diode Selection Notes
Select this component for applications requiring low capacitance and high-speed switching in the K-band spectrum. Consider the small form factor and robust packaging for reliable microwave operation. Evaluate thermal constraints against the specified maximum power dissipation rating to ensure stable performance under operating conditions.
RF Diode Part Context
This part belongs to MACOM's MSS50 series of medium barrier silicon Schottky diodes. These components are designed for high-frequency applications, leveraging advanced semiconductor processes to achieve superior performance metrics compared to standard discrete diodes in similar frequency ranges.
RF Diode Replacement Considerations
Consult official MACOM documentation for verified substitute part numbers. Cross-reference specifications such as capacitance, forward voltage, and package dimensions to ensure functional equivalence without modifying the host circuit design.
RF Diode FAQ
What is the maximum capacitance of the MSS50-048-C15?
The maximum diode capacitance is specified as 0.125 pF.
What type of package does this diode use?
It utilizes a ceramic metal-sealed cofired surface-mount package with a square footprint.
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