RF Diode MSS50-B46-E45 product image

MSS50-B46-E45

  • Description:RF DIODE SCHOTTKY 3V 100MW E45
  • Series:MSS50-xxx-x

SKU:47abcd5437eb Category: Brand:

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MSS50-B46-E45 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 3V 100MW E45. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MSS50-B46-E45

  • Description:RF DIODE SCHOTTKY 3V 100MW E45
  • Series:MSS50-xxx-x
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Diode Type:Schottky - 1 Bridge
  • Voltage - Peak Reverse (Max):3V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.2pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):100 mW
  • Operating Temperature:-65°C ~ 150°C
  • Package / Case:E45
  • Supplier Device Package:E45
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MSS50-B46-E45

MSS50-B46-E45

RF Diode Overview

The MSS50-B46-E45 is a mixer diode manufactured by MACOM Technology Solutions. It utilizes silicon technology and features a high barrier design suitable for millimeter wave band applications. The component is housed in a hermetically sealed H20 case with two pins. Key electrical specifications include a maximum repetitive reverse voltage of 3V, a forward current of 50 mA, and a power dissipation rating of 100 mW. The device operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Hermetically sealed construction for environmental protection
  • High barrier silicon design optimized for millimeter wave frequencies
  • Dual-pin configuration in an H20 ceramic metal-sealed package

RF Diode Applications

  • Millimeter wave mixer circuits
  • High-frequency signal detection
  • Radio frequency mixing applications

RF Diode Procurement Notes

Verify the specific suffix E45 against official datasheets to confirm lead-free compliance and terminal finish specifications. Ensure the H20 package dimensions match the target footprint requirements. Cross-reference the manufacturer part number with authorized distributors to confirm current availability status and authenticity before procurement.

RF Diode Selection Notes

Select this component when a hermetically sealed silicon mixer diode is required for millimeter wave operations. Consider the 3V reverse voltage limit and 50 mA forward current constraints during circuit design. Evaluate the thermal management needs given the 100 mW power dissipation rating and the operating temperature range limits.

RF Diode Part Context

This part belongs to the MSS50 series of mixer diodes from MACOM. The series includes various configurations such as MSS50-244-B20 and MSS50,146-H20. These components are generally designed for robust performance in demanding RF environments, utilizing silicon technology for reliable signal processing at high frequencies.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers for MSS50-B46-E45 are not available in verified sources. Consult MACOM technical support or authorized distributors for potential alternative components that meet identical electrical and mechanical specifications.

MSS50-B46-E45MSS50-B46-E45

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