MSS60-841-E45

RF Diode Overview

The MSS60-841-E45 is an extra high barrier silicon Schottky diode from the MSS60 series, configured as a Ring Quad. It features a typical forward voltage of 1200 mV and a minimum breakdown voltage of 6.0 V. The device exhibits a typical junction capacitance of 0.30 pF with a maximum of 0.35 pF at 1 MHz. Series resistance is typically 23 Ω, while reverse dynamic resistance has a maximum rating of 28 Ω. These electrical characteristics are measured at a temperature of 25°C.

RF Diode Feature Summary

• High barrier height design yielding industry-leading figure of merit values for mixer applications
• Ring quad configuration providing closely matched junctions for balanced circuit integration
• Available in packaged form factor suitable for surface mount assembly processes

RF Diode Applications

• High-performance RF mixer circuits requiring low noise and high isolation
• Detector applications utilizing optimal local oscillator power levels between 6 dBm and 12 dBm per diode
• Wireless infrastructure components demanding high reliability and ruggedness

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package type and screening level. Ensure that the required reverse voltage and forward current ratings align with the system design constraints before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a high barrier height is necessary to minimize leakage current in mixer or detector topologies. The ring quad structure facilitates balanced designs, while the packaged option simplifies assembly compared to beam lead alternatives. Confirm thermal derating requirements for operation above 25°C ambient temperature.

RF Diode Part Context

This part belongs to the MSS60-xxx-x Series of extra high barrier silicon Schottky diodes manufactured by MACOM Technology Solutions. The series utilizes proprietary fabrication processes on N-type epitaxial substrates to achieve superior performance metrics compared to standard Schottky devices.

RF Diode Replacement Considerations

Consult the official datasheet for equivalent models within the same series offering different barrier heights or configurations. Verify compatibility with existing board layouts and soldering profiles when substituting packaged variants.