MSWSE-050-10

RF Diode Overview

The MSWSE-050-10 is a silicon PIN diode switch element designed for broadband, high linearity applications. It supports up to 50 W of power and operates effectively in the 0.1 to 3 GHz frequency range. The device features low insertion loss and medium isolation, making it suitable for wireless infrastructure. Electrical specifications include a breakdown voltage of 500 V, total capacitance of 0.65 pF maximum, and series resistance of 0.6 Ω maximum at 500 MHz. It is housed in an 0805P QFN package.

RF Diode Feature Summary

• Supports up to 50 W power handling
• Low insertion loss performance
• Medium isolation characteristics

RF Diode Applications

• WiMax systems
• Wibro networks
• WLAN infrastructure
• TD-SCDMA applications

RF Diode Procurement Notes

Verify current availability directly with MACOM Technology Solutions or authorized distributors. Confirm RoHS compliance status and check for any recent Product Change Notifications (PCN) that may affect manufacturing details. Ensure ordering suffixes match specific packaging requirements before finalizing procurement.

RF Diode Selection Notes

Select this component for applications requiring high power handling up to 50 W within the 0.1 to 3 GHz range. Consider the 0.65 pF maximum capacitance and 0.6 Ω series resistance for circuit design. Ensure thermal management meets the 10°C/W thermal resistance requirement for sustained operation near maximum power levels.

RF Diode Part Context

This part belongs to the MSWSE series of silicon PIN diode switch elements from MACOM. These components are engineered for wireless infrastructure markets, providing a balance of power handling and RF performance in compact surface-mount packages suitable for modern communication equipment.

RF Diode Replacement Considerations

Consult MACOM documentation for direct substitutes. Verify pinout compatibility and electrical parameters such as breakdown voltage and capacitance when evaluating alternative components for existing designs.