MT3S111(TE85L,F)

Overview

The MT3S111(TE85L,F) is a Silicon-Germanium NPN epitaxial planar transistor designed for VHF-UHF low-noise, low-distortion amplifier applications. It operates with a collector-emitter voltage of 6 V and supports a continuous collector current of 100 mA. The device achieves a transition frequency of 11.5 GHz at 30 mA bias. Key performance metrics include a typical noise figure of 0.9 dB at 1 GHz and an insertion gain of 12 dB at the same frequency. Power dissipation reaches 700 mW when mounted on a specified ceramic board.

Feature Summary

• Utilizes Silicon-Germanium technology to achieve high-frequency operation suitable for VHF and UHF bands.
• Provides low-noise characteristics with a minimum noise figure of 0.9 dB at 1 GHz.
• Delivers high gain with an insertion gain of 12 dB at 1 GHz under standard test conditions.

Applications

• VHF-UHF Low-Noise Amplifier Applications
• Low-Distortion Amplifier Applications

Procurement Notes

Verify component authenticity through official Toshiba Semiconductor channels or authorized distributors. Confirm RoHS compliance status directly with the manufacturer as detailed in their environmental documentation. Ensure proper electrostatic discharge precautions are implemented during handling due to the sensitivity inherent in high-frequency transistor processes.

Selection Notes

Select this component for designs requiring high transition frequencies up to 11.5 GHz and minimal signal degradation in the VHF-UHF spectrum. Evaluate thermal management requirements carefully, as power dissipation ratings depend heavily on mounting conditions. Verify that operating voltages remain within the 6 V collector-emitter limit to maintain reliability.

Part Context

This part belongs to the MT3S111 series of bipolar small-signal transistors manufactured by Toshiba Semiconductor. It is packaged in an S-Mini (JEDEC TO-236 / JEITA SC-59) configuration. The device represents a specialized solution for RF front-end circuits where low noise and linearity are critical design constraints.

Replacement Considerations

Consult the official Toshiba datasheet for direct equivalent part numbers within the MT3S series family. Cross-referencing with other manufacturers requires matching SiGe technology, package type, and specific RF parameters such as noise figure and transition frequency.