ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 5.3V 11.2GHZ UFM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：5.3V
- Frequency - Transition：11.2GHz
- Noise Figure (dB Typ @ f)：1.45dB @ 1GHz
- Gain：12.5dB
- Power - Max：900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 30mA, 5V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, Flat Leads
- Supplier Device Package：UFM
- Grade：-
- Qualification：-
Download product information
Overview
The MT3S113TU is a Silicon-Germanium NPN epitaxial planar transistor designed for VHF-UHF band low-noise and low-distortion amplifier applications. It features a transition frequency of 11.2 GHz, an insertion gain of 12.5 dB at 1 GHz, and a noise figure of 1.15 dB at 1 GHz. The device operates with a collector current of 100 mA and a collector-emitter voltage of 5.3 V. Packaged in the UFM surface-mount format, it weighs approximately 6.6 mg.
Feature Summary
- Utilizes Silicon-Germanium technology to achieve high-frequency performance suitable for VHF and UHF bands.
- Provides low noise figure characteristics essential for sensitive signal amplification stages.
- Delivers high gain and low distortion output intercept points for linear amplifier operations.
Applications
- VHF-UHF Band Low-Noise Amplifier Applications
- Low-Distortion Amplifier Applications
Procurement Notes
Verify the specific ordering suffix and package code against the official Toshiba Semiconductor datasheet before procurement. Confirm that the component meets all absolute maximum ratings for your operating conditions. Ensure proper electrostatic discharge precautions are taken during handling due to the high-frequency process sensitivity.
Selection Notes
Select this component when designing circuits requiring low noise figures around 1 GHz and high linearity. Consider the UFM package dimensions and weight constraints for space-limited designs. Evaluate the DC current gain and power dissipation capabilities relative to your biasing requirements.
Part Context
This part belongs to Toshiba's lineup of Silicon-Germanium transistors optimized for microwave frequencies. It serves as a specialized active component for RF front-end modules where signal integrity and minimal noise addition are critical design parameters.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided source material. Consult Toshiba sales representatives for potential alternatives if this specific model is unavailable.
FAQ
What is the typical noise figure at 1 GHz?
The typical noise figure is 1.15 dB at a frequency of 1 GHz under standard test conditions.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is rated at 5.3 V.
How does the device handle third-order intermodulation distortion?
The device exhibits a third-order intermodulation distortion output intercept point (OIP3) of 34.8 dBmW at 500 MHz.
