MTM684110LBF

FET, MOSFET Arrays Overview

The MTM684110LBF is a dual P-channel MOSFET in a WMini8-F1 package. It features a drain-source voltage of -12 V and low on-resistance, typically 23 mΩ at VGS = -5.0 V. The device supports 1.8 V drive voltage with a threshold voltage ranging from -0.3 V to -1.0 V. Input capacitance is 1400 pF, while output capacitance is 135 pF. Total power dissipation reaches 400 mW without a heat sink. Operating temperature spans from -55 °C to +150 °C storage and -40 °C to +85 °C ambient.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a compact surface-mount footprint
• Capable of operation with low gate drive voltages as low as 1.8 V
• Halogen-free construction compliant with RoHS standards

FET, MOSFET Arrays Applications

• General office equipment switching circuits
• Communication equipment power management
• Household appliance control logic

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation carefully, as the semiconductor business was transferred to Nuvoton Technology Corporation Japan (NTCJ) effective September 1, 2020. Products manufactured after this date are handled by NTCJ but continue to be sold through Panasonic Corporation channels. Ensure documentation reflects the correct publisher entity for compliance purposes.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low on-state resistance and small form factor integration. Verify that the operating environment remains within the specified thermal limits, noting the absolute maximum rating requires specific copper foil area constraints for accurate power dissipation calculations. Confirm compatibility with 1.8 V or 5.0 V logic levels based on the required current load.

FET, MOSFET Arrays Part Context

This part belongs to the MTM series of dual MOSFETs designed for space-constrained electronics. It serves as an alternative to single-channel configurations where dual switching functionality is needed in a minimal footprint. The WMini8-F1 package allows for high-density PCB layouts suitable for modern portable and compact electronic devices.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists for equivalent dual P-channel MOSFETs with matching pinouts and electrical ratings. Verify package dimensions and thermal characteristics before implementation.

FET, MOSFET Arrays FAQ

What is the typical drain-source on-resistance?

The typical RDS(on) is 23 mΩ when measured at a gate-source voltage of -5.0 V.

Is this component suitable for automotive use?

No, it is intended for general applications. Special automotive or safety-critical applications require separate agreement and documentation.

How does the manufacturer name appear on datasheets?

Datasheets may reference Panasonic or Nuvoton Technology Corporation Japan depending on the manufacturing date relative to the September 2020 business transfer.