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The MUBW30-12A6K is a three-phase IGBT bridge module manufactured by IXYS. It integrates six IGBTs and six anti-parallel diodes within a single E1 package. The device supports a collector-emitter voltage of 1200V and a continuous collector current of 30A at 25°C. It operates within a junction temperature range of -40°C to +125°C. The module utilizes screw mounting for secure installation and thermal management.
Verify the specific suffix K against official datasheets to confirm terminal plating or packaging variations. Confirm availability status as distribution data indicates limited stock. Ensure compatibility with existing heatsink interfaces before procurement.
Select this module for applications requiring 1200V blocking capability and moderate current handling in compact spaces. Compare thermal resistance values against system cooling requirements. Verify gate drive voltage compatibility with standard levels.
This component belongs to the MUBW series of three-phase IGBT modules from IXYS. The series is designed for general-purpose industrial applications. The E1 package provides a standardized footprint for easy integration into existing power electronics designs.
Check for direct pin-compatible replacements within the same voltage and current class. Verify thermal characteristics match the original design constraints. Consult manufacturer cross-reference lists for updated or equivalent parts.