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The MUN2111T1 is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SC-59 surface-mount package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 10 kΩ) and a base-emitter resistor (R2 = 10 kΩ). Key electrical ratings include a collector-base voltage (VCBO) of 50 Vdc, a collector-emitter voltage (VCEO) of 50 Vdc, and a maximum collector current (IC) of 100 mAdc at 25°C. The device features a minimum DC current gain (hFE) of 35 at IC = 5.0 mA and VCE = 10 V. Thermal characteristics specify a total device dissipation of 230 mW on a minimum FR-4 pad and 338 mW on a 1.0 x 1.0 inch pad, with a junction temperature range of -55 to +150°C.
Verify the specific ordering suffix and shipping configuration when purchasing. The standard shipping format is tape and reel containing 3000 units. Confirm that the component meets required environmental standards such as halogen-free status if applicable to the design constraints. Ensure the supplier provides valid traceability documentation consistent with the manufacturer's specifications for quality assurance purposes.
Select this component when a PNP BRT with equal 10 kΩ internal resistors is required. Verify that the 50 V voltage rating and 100 mA current capacity meet the circuit demands. Consider the SC-59 package dimensions for PCB layout compatibility. Evaluate thermal dissipation requirements against the available copper pad area on the printed circuit board to ensure operation within the specified junction temperature limits.
This part belongs to the MUN2111T1 Series of preferred Bias Resistor Transistors manufactured by onsemi. The series includes various PNP configurations with different resistor ratios, all sharing the same SC-59 package form factor. These devices are designed to simplify digital switching applications by integrating the biasing network directly onto the silicon die alongside the transistor element.
MUN2111T1G