MUN2111T3G

MUN2111T3G

$0.05
  • Description:TRANS PREBIAS PNP 50V 0.1A SC59
  • Series:-

SKU:215c41e0e6f9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:230 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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MUN2111T3G

Overview

The MUN2111T3G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. This configuration replaces discrete components to reduce board space and system cost. The device features a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. It operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a typical DC current gain (hFE) of 60 at IC = 5.0 mA and VCE = 10 V, and an input resistor ratio (R1/R2) of 1.0.

Feature Summary

  • Integrates a PNP transistor with a monolithic bias network containing two resistors to replace external biasing components.
  • Simplifies circuit design by reducing the total component count required for transistor switching applications.
  • Reduces printed circuit board (PCB) footprint compared to discrete transistor and resistor combinations.

Applications

  • General-purpose digital switching circuits requiring simplified bias networks.
  • Interface logic level translation where compact form factor is prioritized.
  • Embedded systems utilizing microcontroller GPIOs to drive loads directly.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping quantity. Ensure the requested variant matches the required automotive or standard qualification status, as prefixes such as NSV indicate unique site requirements. Confirm RoHS compliance and Pb-free status through the latest datasheet revision before finalizing procurement specifications.

Selection Notes

Select this component when a PNP digital switch with integrated biasing is required in a surface-mount package. Compare thermal dissipation capabilities across available packages like SC-59 or SOT-23 based on the specific power load. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage of the target application circuit.

Part Context

The MUN2111T3G belongs to the DTA114E/D family of Digital Transistors (BRT). This series includes related part numbers such as MMUN2111L, MUN5111, and DTA114EE, which share similar electrical characteristics but differ in package style and pinout configurations. These devices are designed to function as direct replacements for discrete transistor-resistor networks in various consumer and industrial electronics.

Replacement Considerations

Direct functional substitutes within the same family include MMUN2111LT3G (SOT-23 package) and MUN5111T3G (SC-70/SOT-323 package). Verify pin compatibility and thermal resistance differences when substituting between package types to ensure adequate heat dissipation in the final assembly.

MUN2111T3GMUN2111T3G
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