MUN2112T1

MUN2112T1

$0.05
  • Description:TRANS BRT PNP 100MA 50V SC-59
  • Series:-

SKU:718ef9641c7f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS BRT PNP 100MA 50V SC-59
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:230 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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MUN2112T1

Overview

The MUN2112T1 is a PNP Bias Resistor Transistor (BRT) from the MUN2111T1 series, manufactured by onsemi. It integrates a single PNP silicon transistor with a monolithic bias resistor network consisting of two resistors: a series base resistor and a base-emitter resistor. Housed in the SC-59 surface mount package, it replaces discrete devices and external bias networks to reduce board space and component count. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a typical input resistance (R1) of 22 kΩ. The device features a minimum DC current gain (hFE) of 60 at IC = 5.0 mA and VCE = 10 V. Thermal characteristics specify a total power dissipation of 338 mW at 25°C on an FR-4 board with a 1.0 x 1.0 inch pad, operating within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a PNP transistor with a monolithic bias resistor network to eliminate external components.
  • Designed for low power surface mount applications using the SC-59 package.
  • Simplifies circuit design while reducing overall system cost and printed circuit board area.

Applications

  • General-purpose switching circuits requiring simplified biasing.
  • Unregulated current source implementations.
  • Digital logic interface applications replacing discrete resistor networks.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct shipping configuration. Confirm that the required quantity aligns with standard tape and reel packaging specifications. Check for any updated environmental compliance declarations or marking changes prior to finalizing procurement orders.

Selection Notes

Select this component when a PNP digital transistor with a 22 kΩ base resistor is required. Ensure the application voltage does not exceed the 50 V collector-emitter rating. Consider the thermal dissipation limits based on the PCB copper pad size, as power handling varies significantly between minimum and maximum footprint configurations.

Part Context

This part belongs to the MUN2111T1 series of Bias Resistor Transistors. The series includes various PNP configurations with different resistor ratios and values, all sharing the same SC-59 package and fundamental transistor structure. These devices are designed to streamline the design process by consolidating multiple discrete components into a single surface-mount unit.

Replacement Considerations

Direct substitutes within the same family include MUN2111T1 and MUN2113T1, which share identical packaging but differ in internal resistor values. Verify that alternative parts match the required 22 kΩ input resistance and PNP polarity before substitution.

MUN2112T1MUN2112T1
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