ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC59
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：230 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SC-59
Download product information
Overview
The MUN2112T1G is a PNP Digital Transistor (BRT) manufactured by onsemi, designed to replace single devices and external bias resistor networks. It integrates a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device features a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Typical internal resistance values are 22 kΩ for both R1 and R2, resulting in a typical resistor ratio of 1. It operates within a temperature range of -55 °C to +150 °C and is housed in an SOT-323 (SC-70) surface-mount package.
Feature Summary
- Integrates a monolithic bias network with series base and base-emitter resistors to simplify circuit design.
- Reduces board space and component count by replacing individual discrete components.
- Designed for high-temperature operation up to +150 °C.
Applications
- Switching applications requiring simplified biasing networks.
- General-purpose digital logic interfacing.
- Automotive electronics requiring AEC-Q101 qualified components.
Procurement Notes
Verify the specific ordering suffix to confirm packaging type, as variations exist between tape-and-reel and cut tape formats. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure the selected variant matches the required automotive qualification if applicable.
Selection Notes
Select this component when a PNP transistor with integrated bias resistors is needed to reduce PCB footprint. Verify that the 22 kΩ internal resistance values align with the target switching speed and drive current requirements. Ensure the SOT-323 package dimensions fit the available board space constraints.
Part Context
This part belongs to the MUNx112 series of digital transistors from onsemi. These devices are engineered to consolidate multiple discrete components into a single surface-mount package, enhancing reliability and manufacturing efficiency. The series includes various resistor ratios and transistor polarities to cover diverse application needs.
Replacement Considerations
Compatible substitutes include NSVMUN2112T1G and MUN2112T3. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure any alternative meets the same AEC-Q101 automotive qualification standards if required by the design.
FAQ
What is the typical value of the internal bias resistors?
The typical values for both the series base resistor (R1) and the base-emitter resistor (R2) are 22 kΩ.
Is this component qualified for automotive applications?
Yes, variants with the NSV prefix are AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
What is the maximum operating junction temperature?
The maximum operating temperature for the MUN2112T1G is +150 °C.
