MUN2113T1G

Overview

The MUN2113T1G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of two resistors with a typical input resistance of 47 kOhms and a resistor ratio of 1. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 230 mW. The component utilizes an SC-59-3 surface-mount package.

Feature Summary

• Integrates a single transistor with a monolithic bias network to replace discrete components
• Reduces printed circuit board space and overall component count
• Simplifies circuit design through built-in base and base-emitter resistors

Applications

• General-purpose switching applications
• Driver circuits for logic interfaces
• Replacement for discrete resistor networks in digital logic systems

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and compliance status. Confirm that the SC-59-3 package matches the target footprint requirements. Ensure the component meets RoHS standards if required by the final assembly specifications.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required. Verify that the 47 kOhm input resistance aligns with the driving source impedance. Ensure the 50 V collector-emitter voltage rating exceeds the maximum operating voltage of the application circuit.

Part Context

This part belongs to the MUN2213 series of digital transistors designed to simplify circuit layouts. It serves as a direct replacement for discrete resistor-transistor combinations, offering a standardized solution for biasing requirements in consumer and industrial electronics.

Replacement Considerations

MMUN2213LT1G: Alternative version in SOT-23-3 package with similar electrical characteristics.