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The MUN2114T1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 10 kΩ) and a base-emitter resistor (R2 = 47 kΩ). It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device features a DC current gain (hFE) of at least 80 at 5 mA and 10 V, with a typical value of 140. It is housed in an SC-59 (SOT-23) package and supports a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix and package type when sourcing, as the MUN2114 family includes variants in different packages such as SOT-23 and SC-70. Confirm that the selected part meets the required thermal dissipation characteristics for the intended ambient temperature conditions. Ensure compliance with RoHS and halogen-free requirements if specified for the application.
Select the MUN2114T1G when a PNP digital transistor with a 10 kΩ base resistor and 47 kΩ emitter resistor is required. Consider the SC-59 package dimensions for PCB layout constraints. Evaluate the thermal derating curves if operating near the maximum junction temperature limits. Verify that the input voltage ratings align with the control signal levels in the target circuit.
The MUN2114T1G belongs to the DTA114Y/D digital transistor series published by onsemi. This series includes various configurations of NPN and PNP transistors with integrated bias networks. The MUN2114 specifically denotes the PNP variant with a 10k/47k resistor ratio, designed to simplify biasing in digital logic interfaces.
Direct replacements within the same datasheet include SMUN2114T1G. Other package variants like MMUN2114LT1G offer the same electrical characteristics in an SOT-23 package. Cross-brand equivalents require verification of pinout compatibility and resistor values.