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The MUN2115T1G is a single PNP Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor within an SOT-23-3 package. The device supports a collector continuous current of 100 mA and a collector-emitter voltage of 50 V. Key electrical parameters include a typical input resistance of 10 kOhms, a minimum DC current gain (hFE) of 160, and a power dissipation rating of 246 mW. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout configuration and internal resistor values. Ensure the selected variant matches the required polarity and package type for the target application. Cross-reference the part number with the latest RoHS compliance documentation to meet regulatory requirements.
Select this component when a compact PNP solution with integrated biasing is required for low-current switching tasks. Compare the 10 kOhm input resistance against circuit drive capabilities to ensure adequate base current. Evaluate the thermal performance relative to the 246 mW power dissipation limit under expected operating conditions.
This component belongs to the MUN21xx series of digital transistors from onsemi. These devices are designed to simplify analog and digital interface designs by combining active and passive elements into a single surface-mount package, offering a cost-effective alternative to discrete resistor-transistor networks.
Compatible substitutes within the same family include MMUN2115LT1G and MUN2115LT1G. Verify that any replacement maintains the identical SOT-23-3 footprint and PNP polarity characteristics.