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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC59
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：230 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SC-59
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Overview
The MUN2116T1G is a single NPN digital transistor manufactured by onsemi, housed in an SC-59 (SOT-363) surface-mount package. It integrates a bias resistor network with the transistor to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 4.7 kOhms and a minimum DC current gain (hFE) of 160. Power dissipation is rated at 338 mW, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Integrates a built-in bias resistor network with an NPN transistor to reduce component count and board space.
- Designed for surface-mount installation using the compact SC-59 package.
- Capable of handling a continuous collector current of 100 mA with a 50 V voltage rating.
Applications
- General-purpose switching applications requiring pre-biased NPN control.
- Replacement for discrete transistor and resistor networks in low-power circuits.
- Interface circuits for microcontrollers and logic gates.
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the SC-59 package dimensions match your PCB footprint requirements. Ensure that the thermal management capabilities align with your application's power dissipation needs within the specified temperature range.
Selection Notes
Select the MUN2116T1G when a single NPN digital transistor with integrated biasing is required in a small SMD package. Compare its 4.7 kOhm input resistance and 160 hFE against other MUN series variants if different bias ratios or gain levels are needed. Ensure the 50 V VCEO rating exceeds the maximum voltage present in your switching circuit.
Part Context
The MUN2116T1G belongs to onsemi's MUN21xx series of digital transistors. This family provides pre-biased solutions for both NPN and PNP configurations. These components are designed to replace multiple discrete components, offering a compact alternative for signal switching and level shifting tasks in consumer and industrial electronics.
Replacement Considerations
MUN2216T1G: Similar NPN digital transistor but may differ in internal resistor values or gain characteristics; verify datasheet specifics. NSVMUN5116T1G: PNP variant in SC-70 package; not electrically equivalent due to polarity and package differences.
