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The MUN2130T1G is a pre-biased PNP digital transistor manufactured by onsemi, designed to replace single devices and external bias resistor networks. It integrates a monolithic bias network consisting of two resistors within a single SC-59 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. The device features a base resistor (R1) of 1 kOhms and an emitter resistor (R2) of 1 kOhms. Maximum power dissipation is rated at 230 mW, with a DC current gain (hFE) minimum of 3 at 5 mA and 10 V. The saturation voltage (Vce(sat)) is 250 mV at 5 mA base and 10 mA collector currents.
Verify the specific ordering suffix T1G to confirm the tape-and-reel packaging format and RoHS compliance status. Confirm the manufacturer part number matches exactly to ensure correct pinout and electrical characteristics. Check datasheet revisions for any updates to maximum ratings or thermal characteristics before finalizing procurement specifications.
Select this component when a PNP configuration with equal 1 kOhm bias resistors is required. Ensure the 50 V collector-emitter voltage rating meets the circuit's maximum operating voltage. Verify that the 100 mA continuous collector current capability aligns with the load requirements. Consider the SC-59 package dimensions for PCB layout constraints compared to alternative packages like SOT-23.
This component belongs to the MUN21xx series of pre-biased NPN/PNP digital transistors from onsemi. These devices are part of a broader family designed to simplify biasing in digital logic and switching applications. The MUN2130T1G specifically denotes the PNP variant with 1 kOhm/1 kOhm resistor values in the SC-59 package.
Compatible substitutes include other PNP BRTs with similar 50V/100mA ratings and 1k/1k resistor ratios, such as the DTA113EE or NSBA113EF3 series from onsemi. Verify pinout compatibility and exact resistance values when substituting with parts from different manufacturers.