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The MUN2131T1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device features a typical input resistor value of 2.2 kOhms with a resistor ratio of 1. Packaged in the SC-59 (CASE 318D) format, it supports surface mount installation. Thermal characteristics include a total device dissipation of 230 mW at 25°C and a junction-to-ambient thermal resistance of 540 °C/W. The operating temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix and package style against the manufacturer's official documentation before procurement. Confirm that the SC-59 package variant matches the required footprint for the target PCB layout. Ensure compliance with environmental directives such as RoHS if applicable to the final assembly requirements.
Select this component when a compact PNP switching solution with integrated biasing is required. Compare thermal dissipation limits against the expected load conditions to ensure operation within the specified junction temperature range. Consider alternative packages like SOT-23 or SC-70 if different form factors are needed for the same electrical specifications.
This part belongs to the MUN2131 series of digital transistors manufactured by onsemi. It shares electrical characteristics with other devices in the DTA123E family but differs in physical packaging. The series is engineered to consolidate multiple discrete passive and active components into a single surface-mount device.
MMUN2131LT1G